DMP1096UCB4 P-Channel MOSFET

Diodes

Description

DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.@ VGS = -4.5V, TA = +25°C) VDSS -12V RDS(on) 85mΩ Qg 3.7nC Qgd 0.6nC ID -2.6.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMP1096UCB4
Manufacturer: DIODES ↗
File Size: 289.43 KB
Datasheet: DMP1096UCB4-Diodes.pdf
Description: P-Channel MOSFET

Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o

Applications

* Applications
* Battery Management
* Load Switch

DMP1096UCB4 Distributors

📁 Related Datasheet

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DMP1096UCB4 P-Channel MOSFET Diodes

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