100mΩ @ VGS = -4.5 V
160mΩ @ VGS = -2.5V
200mΩ @ VGS = -1.8V
380mΩ @ VGS = -1.5V
TA = +25°C
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
Power Management Functions
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
ESD Protected Gate
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0015 grams (Approximate)
Pin-out Top view
Ordering Information (Note 4)
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
12 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Document number: DS36557 Rev. 2 - 2
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