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Diodes Semiconductor Electronic Components Datasheet

DMP1200UFR4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
-12V
RDS(ON)
100mΩ @ VGS = -4.5 V
160mΩ @ VGS = -2.5V
200mΩ @ VGS = -1.8V
380mΩ @ VGS = -1.5V
ID
TA = +25°C
-2A
-1A
-0.5A
-0.2A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Power Management Functions
Backlighting
Load Switch
X2-DFN1010-3
DMP1200UFR4
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
ESD Protected Gate
Low Input/Output Leakage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN1010-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0015 grams (Approximate)
ESD PROTECTED
Bottom View
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP1200UFR4-7
X2-DFN1010-3
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
12
YM
12 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP1200UFR4
Document number: DS36557 Rev. 2 - 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
October 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1200UFR4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP1200UFR4
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Characteristic
Steady
TA = +25C
Symbol
VDSS
VGSS
ID
Value
-12
±8
2
Units
V
V
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Value
0.48
266
1.26
102
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
Min
-12
-0.35

Typ
70
90
115
145
Max
-1
10
-1.0
100
160
200
380
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs| 40
VSD

-1.2
Ciss 514
Coss 131
Crss
60
Qg  5.8
Qgs 0.8
Qgd
1.2
tD(on)
15
tr 62
tD(off)  332
tf  166



Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
V
µA
µA
V
m
mS
V
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
Test Condition
VGS = 0V, ID = -250µA
VDS = -9.6V, VGS = 0V
VGS = 6V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -2A
VGS = -2.5V, ID = -1A
VGS = -1.8V, ID = -0.5A
VGS = -1.5V, ID = -0.2A
VDS = -5V, ID = -0.5A
VGS = 0V, IS = -0.2A
VDS = -5V, VGS = 0V, f =
1.0MHz
VGS = -4.5V, VDS = -5V,
ID = -2A
VDD = -5V, VGEN = -4.5V,
RGEN = 6Ω
DMP1200UFR4
Document number: DS36557 Rev. 2 - 2
2 of 6
www.diodes.com
October 2014
© Diodes Incorporated


Part Number DMP1200UFR4
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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