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DMP2066LVT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2066LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
45mΩ @ VGS = -4.5V
65mΩ @ VGS = -2.5V
ID max
TA = +25°C
-4.5A
-3.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)), and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
SOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin-Out
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2066LVT-7
DMP2066LVT-13
Case
SOT26
SOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
Shanghai A/T Site
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
February 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2066LVT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2066LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Body-Diode Continuous Current (Note 5)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
-20
8
-4.5
-3.7
-20
-2.0
Unit
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.2
100
74
1.8
70
46
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TJ = +55°C (Note 8)
Zero Gate Voltage Drain Current @TJ = +150°C (Note 8)
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Static Drain-Source On-Resistance @ TJ = +125°C (Note 8)
Diode Forward Voltage
On State Drain Current (Note 8)
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
RDS (ON)
VSD
ID(ON)
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tr
td(off)
tf
Min
-20
-0.4
-0.5
10










Typ
25
33
-0.72
1,496
130
116
14.4
2.6
2.7
8.5
11
61
25
Max
-1
-10
-100
100
-1.5
45
65
72
-1.4
2,990
260
230
25
5
5.5
30
60
130
100
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V ID = -250µA, VGS = 0V
μA VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V
μA VDS = -16V, VGS = 0V
nA VDS = 0V, VGS = 8V
V VDS = VGS, ID = -250µA
mVGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.8A
mVGS = -4.5V, ID = -4.5A
V IS = -2.1A, VGS = 0V
A VDS 5V, VGS = 4.5V
pF
pF VDS = -15V, VGS = 0V
f = 1.0MHz
pF
nC VDS = -10V, VGS = -4.5V,
ID = -4.5A
ns
VDS = -5V, VGS = -4.5V,
ID = -1A, RG = 6.0
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated



Part Number DMP2066LVT
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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