DMP2070UCB6 Datasheet, Diodes

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 55mΩ to Minimize On-State Losses Qg = 2.9nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a L.

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching.

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications
* Battery Manag.