Full PDF Text Transcription for DMS3016SSSA (Reference)
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DMS3016SSSA. For precise diagrams, and layout, please refer to the original PDF.
DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky...
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e patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Ultra Low VSD – enhanced to reduce losses due to body diode conduction • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated • Lead Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded P