DMS3015SSS
Key Features
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
- Low RDS(ON) - minimizes conduction losses
- Low VSD - reducing the losses due to body diode conduction
- Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
