DMS3012SFG
Description
This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
- Low RDS(ON) – minimize conduction losses
- Low VSD – reducing the losses due to body diode conduction
- Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8, enabling smaller end product
- 100% UIS (Avalanche) rated
- 100% Rg tested
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
Applications
- Backlighting
