DMS3019SSD Description
DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET.
DMS3019SSD Key Features
- DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
- Low RDS(on)
- minimizes conduction loss
- Low VSD
- reducing the losses due to body diode construction
- Low Qrr
- lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio
- reduces risk of shootthrough or cross conduction currents at high frequencies
- Avalanche rugged