DMS3019SSD
Key Features
- DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
- Low RDS(on) – minimizes conduction loss
- Low VSD – reducing the losses due to body diode construction
- Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
- Avalanche rugged – IAR and EAR rated
- Lead Free By Design/RoHS pliant (Note 1)
- "Green" Device (Note 2)
- Qualified to AEC-Q101 Standards for High Reliability
- Case Material: Molded Plastic, “Green” Molding pound. UL
