DMS3019SSD
DMS3019SSD is ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
- Low RDS(on)
- minimizes conduction loss
- Low VSD
- reducing the losses due to body diode construction
- Low Qrr
- lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio
- reduces risk of shootthrough or cross conduction currents at high frequencies
- Avalanche rugged
- IAR and EAR rated
- Lead Free By Design/Ro HS pliant (Note 1)
- "Green" Device (Note 2)
- Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
- Case: SO-8
- Case Material: Molded Plastic, “Green” Molding pound. UL
Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram Below
- Weight: 0.072 grams (approximate)
Top View
D2 G2 D2 S2/D1 G1...
