DMT10H032LFDF Datasheet | Diodes Incorporated

100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 32mΩ @ VGS = 10V 46mΩ @ VGS = 4.5V ID max TA = +25°C 6A 5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits - 0.6mm Profile - Ideal for Low Profile Applications - PCB Footprint of 4mm2 - Low On-Resistance - 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable and Robust End Application - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Applications - Power Management Functions - Battery Operated Systems and Solid-State Relays - Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. U-DFN2020-6 (Type F) Mechanical Data - Case: U-DFN2020-6 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per...