900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Diodes Semiconductor Electronic Components Datasheet

MMDT3946LP4 Datasheet

COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS

No Preview Available !

MMDT3946LP4
COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
Features
Complementary Pair: One 3904 (NPN) and One 3906 (PNP)
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free by Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
Mechanical Data
Case: DFN1310H4-6
Case Material: Molded Plastic. “Green Molding”
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – NiPdAu over Copper leadframe (Lead
Free Plating) Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 4
Ordering Information: See Page 4
C2 B1 E1
GH
Z
R0.15 0
B
D
D
Top View
Side View
KL
E
NM
L
N
C
Z
E2 B2 C1
Internal Schematic
(TOP VIEW)
A
Bottom View
E1, B1, C1 = PNP3906 Section
E2, B2, C2 = NPN3904 Section
DFN1310H4-6
Dim Min Max Typ
A 1.25 1.38 1.30
B 0.95 1.08 1.00
C 0.20 0.30 0.25
D* -
- 0.10
E** -
- 0.20
G - 0.40 -
H 0 0.05 0.02
K* 0.10 0.20 0.15
L* 0.30 0.50 0.40
M** -
- 0.35
N* -
- 0.25
Z** -
- 0.05
All Dimensions in mm
* Dimensions D, K, L, N Repeat 4X
** Dimensions E, M, Z Repeat 2X
Maximum Ratings, NPN 3904 Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Value
60
40
6.0
200
200
625
Maximum Ratings, PNP 3906 Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Value
-40
-40
-5.0
-200
200
625
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB.
4. Maximum combined dissipation.
Unit
V
V
V
mA
mW
°C/W
Unit
V
V
V
mA
mW
°C/W
DS30822 Rev. 4 - 2
1 of 5
www.diodes.com
MMDT3946LP
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

MMDT3946LP4 Datasheet

COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS

No Preview Available !

Electrical Characteristics, NPN 3904 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
Cobo
fT
td
tr
ts
tf
Min
60
40
6.0
40
70
100
60
30
0.65
300
Max
50
50
300
0.20
0.30
0.85
0.95
4.0
35
35
200
50
Unit
V
V
V
nA
nA
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE(off) = -0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Electrical Characteristics, PNP 3906 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
Min
-40
-40
-5.0
60
80
100
60
30
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VBE(SAT)
Cobo
-0.65
Current Gain-Bandwidth Product
fT 250
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
Notes: 5. Short duration test pulse used to minimize self-heating effect.
Max
-50
-50
300
-0.25
-0.40
-0.85
-0.95
4.5
35
35
225
75
Unit
V
V
V
nA
nA
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCE = -30V, VEB(OFF) = -3.0V
VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
DS30822 Rev. 4 - 2
2 of 5
www.diodes.com
MMDT3946LP
© Diodes Incorporated


Part Number MMDT3946LP4
Description COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
Maker Diodes
Total Page 5 Pages
PDF Download

MMDT3946LP4 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
Diodes





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy