DMN2112SN Datasheet N-Channel FET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMN2112SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 20V RDS(ON) MAX 0.10Ω @ VGS = 4.5V 0.14Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.5V ID TA = +25°C 1.2A 0.5A 0.

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DMN2112SN n-channel fet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN2112SN
Manufacturer	Diodes Incorporated
File Size	909.74 KB
Description	N-Channel FET
Download	DMN2112SN Download (PDF)

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Applications  Notebook computers  Portable phones  PCMCIA cards and battery powered circuits

Key Features

Low On-Resistance.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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