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DMP21D5UFB4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP21D5UFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on) max
1.0Ω @ VGS = -4.5V
1.5Ω @ VGS = -2.5V
2.0Ω @ VGS = -1.8V
3.0Ω @ VGS = -1.5V
ID
TA = 25°C
-700mA
-600mA
-500mA
-380mA
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-low package profile, 0.4mm maximum package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
ESD PROTECTED
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP21D5UFB4-7B
Case
X2-DFN1006-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NS = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP21D5UFB4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP21D5UFB4
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -1.8V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
t<10s
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
Value
-20
±8
-700
-600
-850
-670
-500
-400
-600
-550
-2
-800
Units
V
V
mA
mA
mA
mA
A
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.46
279
210
0.95
134
100
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = -4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
Min
-20
-
-
-
VGS(th)
-0.5
-
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
0.67
0.7
0.9
1.2
1.5
5
0.7
-0.75
46.1
7.2
4.9
14.3
0.5
0.09
0.09
8.5
4.3
20.2
19.2
Max
-
-100
±1.0
±5.0
-1.0
0.97
1.0
1.5
2.0
3.0
-
-
-1.2
-
-
-
-
-
-
-
-
-
-
-
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
2 of 6
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = -1mA
nA VDS = -20V, VGS = 0V
μA VGS = ±5V, VDS = 0V
VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -5V, ID = -100mA
VGS = -4.5V, ID = -100mA
Ω VGS = -2.5V, ID = -80mA
VGS = -1.8V, ID = -40mA
VGS = -1.5V, ID = -30mA
VGS = -1.2V, ID = -1mA
S VDS = -3V, ID = -100mA
V VGS = 0V, IS = -330mA,
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = -10V, ID = -250mA
VDD = -3V, VGS = -2.5V,
ns RL = 300, RG = 25,
ID = -100mA
May 2012
© Diodes Incorporated


Part Number DMP21D5UFB4
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes Incorporated
Total Page 6 Pages
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