High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 60.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche cha.

DFD05T

DFD2N60

DFD30N06

DFD30T

DF-A

DF-C10

DF-G1

DF-TFN0430FB-M2

DF-TFN0700FB-M1

DF0.01-C10

DF0.02-C10

DF0.05-C10

DF0.1-C10