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DFF7N60 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A 3. Source Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested General.

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Datasheet Details

Part number DFF7N60
Manufacturer DnI
File Size 1.16 MB
Description N-Channel MOSFET
Datasheet download datasheet DFF7N60 Datasheet

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www.DataSheet4U.com DFF7N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A 3. Source Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and small power inverter application.