DFF7N60 mosfet equivalent, n-channel mosfet.
High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A
3. Source
Gate Charge (Typical 48nC) Improv.
This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche c.
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