RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designe.

DFP1000

DFP14

DFP16

DFP2INT

DFP2N60

DFP30N06

DFP4N60

DFP630

DFP634

DFP640

DFP70N06

DFP730

DFP740