Low RDS(on) (0.014 )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designe.

DFP730

DFP740

DFP75N75

DFP7N60

DFP1000

DFP14

DFP16

DFP2INT

DFP2N60

DFP30N06

DFP4N60

DFP50N06

DFP630