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DFP740 Datasheet Preview

DFP740 Datasheet

N-Channel MOSFET

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DFP740 pdf
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N-Channel MOSFET
Features
RDS(on) (Max 0.55 )@VGS=10V
Gate Charge (Typical 48nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220 pkg is well suited for
half bridge and full bridge resonant topolgy like a electronic
ballast .
DFP740
BVDSS = 400V
RDS(ON) = 0.55 ohm
ID = 10A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
400
10
6.3
40
±30
680
12.5
5
125
1.0
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1
-
62
March, 2005. Rev. 1.
Copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7



DnI
DnI

DFP740 Datasheet Preview

DFP740 Datasheet

N-Channel MOSFET

No Preview Available !

DFP740 pdf
www.DataSheet4U.com
DFP740
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS/ Breakdown Voltage Temperature
TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS =400V, VGS = 0V
VDS = 320V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 5A
VGS =0 V, VDS =25V, f = 1MHz
VDD =250V, ID =10A, RG =50
see fig. 13.
(Note 4, 5)
VDS =320V, VGS =10V, ID =10A
see fig. 12.
(Note 4, 5)
Min
400
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.5 - V/°C
- 1 uA
- 10 uA
- 100 nA
-
-100
nA
- 4.0
0.41 0.55
V
830 -
140 -
40 -
22 -
25 -
130 -
30 -
48 60
7-
20 -
pF
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =10A, VGS =0V
IS=10A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 18.5mH, IAS =10A, VDD = 50V, RG = 50 , Starting TJ = 25°C
3. ISD 10A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
335
3.6
Max.
10
40
2.0
-
-
Unit.
A
V
ns
uC
2/7


Part Number DFP740
Description N-Channel MOSFET
Maker DnI
Total Page 7 Pages
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