UHF power transistor
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
UHF and VHF range for nominal supply voltages up to 13.5 V. The resistance stabilization of the
transistor provides protection against device damage at severe load mismatch conditions.
The transistor is housed in a 1/4" capstan envelope with a ceramic cap.