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BLW86 - HF/VHF power transistor

General Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f.

and v.h.f.

transmitters with a nominal supply voltage of 28 V.

Key Features

  • = (%) 40 Gp ηdt 30 10.
  • 40 d5 20 5.
  • 50 10 0 2.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLW80 UHF power transistor
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BLW87 VHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLW86 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) s.s.b. (class-A) VCE V 28 28 26 f MHz 175 1,6 − 28 1,6 − 28 PL W 45 5−47,5 (P.E.P.) 17 (P.E.P.