BLW85 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCE V 12,5 12,5 f MHz 175 1,6- 28 PL W 45 3- 30 (P.E.P.) > Gp d B 4,5 > typ. 19,5 η % 75 typ. 35 zi Ω 1,4 + j1,5 - ZL Ω 2,7- j1,3 - d3 d B - typ. - 33 PIN CONFIGURATION halfpage PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter 4 c handbook, halfpage 2 3 4 e b MBB012 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. March 1993 Philips Semiconductors Product specification HF/VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation up to (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max. 36 V 16 V 4 V 9 A 22 A 105 W 200 °C - 65 to + 150 °C handbook, halfpage MGP612...