BLW83 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) PIN CONFIGURATION halfpage VCE V 26 28 f MHz 1,6 - 28 1,6 - 28 PL W 0 - 10 (P.E.P.) 3 - 30 (P.E.P.) > Gp d B 20 typ. 21 ηdt % - IC A 1,35 < d3 d B - 40 typ. - 30 Th °C 70 25 typ. 40 typ. 1,34 PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter 4 c handbook, halfpage 2 3 4 e b MBB012 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August...