BLW87 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW87 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized mon-emitter class-B circuit MODE OF OPERATION c.w. VCE V 13,5 f MHz 175 PL W 25 Gp d B >6 η % > 70 zi Ω 1,6 + j1,4 YL m S 210 + j5,5 PIN CONFIGURATION halfpage PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter 4 c handbook, halfpage 2 3 4 e b MBB012 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August 1986 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max. 36 V 18 V 4 V 6 A 12 A 76 W 200 °C - 65 to + 150 °C handbook, halfpage MGP649 MGP650 handbook, halfpage IC (A) Prf (W) Th = 70...