BLW80 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized mon-emitter class-circuit. MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 4 4 > Gp d B 8,0 > typ. 15,0 η % 60 typ. 60 zi Ω 2,1 + j2,3 2,0 - j2,2 YL m S 57 - j56 51 - j48 PIN CONFIGURATION PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. March 1993 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value); f > 1 MHz Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj max max max max max max 36 V 17 V 4 V 1 A 3 A 17 W °C 200 °C - 65 to +150 max handbook, halfpage MGP938 MGP939 handbook,...