Download EN27LN1G08 Datasheet PDF
EN27LN1G08 datasheet preview
EN27LN1G08 page 2
Page 2
EN27LN1G08 page 3
Page 3

EN27LN1G08 Key Features

  • Voltage Supply: 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (128M + 4M) x 8bit for 1Gb
  • Data Register : (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64) bytes
  • Block Erase : (128K + 4K) bytes
  • Page Read Operation
  • Page Size : (2K + 64) bytes
  • Random Read : 25µs (Max.)

Related Elite Semiconductor Microelectronics Technology Datasheets

Part Number Description
EN27LN2G08 3.3V NAND Flash Memory
EN27LN4G08 3.3V NAND Flash Memory
EN27LN51208 3.3V NAND Flash Memory
EN27LV020 2Megabit Low Voltage EPROM
EN27LV020B 2Megabit Low Voltage EPROM

EN27LN1G08 Description

EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market.