EN27LN1G08 Datasheet 3.3V NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Datasheet Details

Part number	EN27LN1G08
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	879.19 KB
Description	3.3V NAND Flash Memory
Download	EN27LN1G08 Download (PDF)

EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

EN27LN1G08 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory EN27LN1G08.

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Page Program Time : 200µs (Typ. ) - Block Erase Time : 1.5m.