Download EN27LN2G08 Datasheet PDF
EN27LN2G08 datasheet preview
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EN27LN2G08 Key Features

  • Voltage Supply: 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (256M + 16M) x 8bit
  • Data Register : (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64) bytes
  • Block Erase : (128K + 4K) bytes
  • Page Read Operation
  • Page Size : (2K + 64) bytes
  • Random Read : 25µs (Max.)

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EN27LN2G08 Description

EN27LN2G08_Preliminary The device is a 256Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.