EN27LN2G08 Datasheet - EON

3.3V NAND Flash Memory

EN27LN2G08 Features

* Voltage Supply: 2.7V ~ 3.6V

* Organization - Memory Cell Array : (256M + 16M) x 8bit - Data Register : (2K + 64) x 8bit

* Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes

* Page Read Operation - Page Size : (2K + 64) byt

EN27LN2G08 General Description

EN27LN2G08_Preliminary The device is a 256Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it i.

EN27LN2G08 Datasheet (3.06 MB)

EN27LN2G08 Datasheet Preview — Preview of EN27LN2G08 PDF

Datasheet Details

Part number:

EN27LN2G08

Manufacturer:

EON

File Size:

3.06 MB

Description:

3.3v nand flash memory.

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EN27LN2G08 3.3V NAND Flash Memory EON

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EN27LN2G08 Features

EN27LN2G08 General Description

Datasheet Details

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