EN27LN2G08 Datasheet 3.3V NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Datasheet Details

Part number	EN27LN2G08
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	3.06 MB
Description	3.3V NAND Flash Memory
Download	EN27LN2G08 Download (PDF)

EN27LN2G08_Preliminary The device is a 256Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

EN27LN2G08_Preliminary EN27LN2G08 2 Gigabit (256M x 8), 3.3 V NAND Flash.

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array : (256M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Page Program Time : 250µs (Typ. ) - Block Erase Time : 2ms (Typ. ).