EN27LN4G08 Datasheet 3.3V NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Datasheet Details

Part number	EN27LN4G08
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	3.01 MB
Description	3.3V NAND Flash Memory
Download	EN27LN4G08 Download (PDF)

EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory EN27LN4G08.

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes.
Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max. ) - Serial Access : 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Page Program Time : 250µs (Typ. ) - Block Erase Time : 2ms (Typ. ).