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EPC

EPC1007 Datasheet Preview

EPC1007 Datasheet

Power Transistor

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DATASHEET
EPC1007 – Enhancement Mode Power Transistor
VDSS , 100 V
RDS(ON) , 30 mW
ID , 6 A
EPC1007
EFFICIENT POWER CONVERSION
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
VDS Drain-to-Source Voltage
100
V
ID
Continuous (TA = 25˚C, θJA = 90)
6
A
Pulsed (25˚C, Tpulse = 300 µs)
25
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
6
V
-5
TJ Operating Temperature
TSTG Storage Temperature
-40 to 125
˚C
-40 to 150
PARAMETER
TEST CONDITIONS
MIN
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 75 µA
100
IDSS
Drain Source Leakage
VDS = 80 V, VGS = 0 V
Gate-Source Forward Leakage
IGSS
Gate-Source Reverse Leakage
VGS = 5 V
VGS = -5 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1.2 mA
0.7
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 6 A
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
QG
Total Gate Charge (VGS = 5 V)
QGD
Gate-to-drain Charge
QGS
Gate-to Source Charge
QOSS
Output Charge
QRR
Source-Drain Recovery Charge
VDS = 50 V, VGS = 0 V
VDS = 50 V, ID = 6 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
EPC Power Transistors are supplied only in
passivated die form with solder bumps
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP
MAX
UNIT
V
20
60
µA
.25
2
mA
0.1
0.5
1.4
2.5
V
24
30
mΩ
200
110
pF
10
2.7
1
0.75
nC
8
0
1.8
V
1.75
| PAGE 1




EPC

EPC1007 Datasheet Preview

EPC1007 Datasheet

Power Transistor

No Preview Available !

DATASHEET
EPC1007
Figure 1: Typical Output Characteristics
VGS = 5
VGS = 4
20
VGS = 3
VGS = 2
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS – Drain to Source Voltage (V)
Figure 3: RDS(ON) vs VG for Various Current
70
60
50
40
30
20
ID = 4 A
ID = 6 A
10
ID = 10 A
ID = 20 A
02.5
3
3.5
4
4.5
5
5.5
VGS – Gate to Source Voltage (V)
Figure 2: Transfer Characteristics
18
16
25˚C
125˚C
14
VDS = 3V
12
10
8
6
4
2
0
.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS – Gate to Source Voltage (V)
Figure 4: RDS(ON) vs VG for Various Temperature
90
25˚C
80
125˚C
ID = 6 A
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
5
5.5
VGS – Gate to Source Voltage (V)
Figure 5: Capacitance
0.35
0.3
0.25
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
0.2
0.15
0.1
0.05
0
0 10 20 30 40 50 60 70 80 90 100
VDS – Drain to Source Voltage (V)
Figure 6: Gate Charge
5
4.5 ID = 6 A
VDS = 50 V
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
QG – Gate Charge (nC)
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
2.5
3
| PAGE 2



Part Number EPC1007
Description Power Transistor
Maker EPC
Total Page 3 Pages
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EPC1007 Datasheet PDF





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