EPC EPC1005
Enhancement Mode Power Transistor
| Part No. | EPC1005 |
|---|---|
| Datasheet | EPC1005 Download |
| Manufacturer |  EPC |
| Description | Enhancement Mode Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
VDS Drain-to-Source Voltage 60 ID Continuous (TA = 25˚C, θJA= 20) Pulsed (25˚C, Tpulse = 300 µs) 25 100 VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 -40 to 150 V A V ˚C PARAMETER Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(th) RDS(ON) Gate Threshold Voltage Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 300 µA VDS = 48 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 5 mA VGS = 5 V, ID = 25 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to Drain Charge QGS Gate to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 30 V, VGS = 0 V VDS = 30 V, ID = 25 A Source-Drain Characteristics (TJ= 25˚C unless oth...
