EPC EPC1007
Power Transistor
| Part No. | EPC1007 |
|---|---|
| Datasheet | EPC1007 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
VDS Drain-to-Source Voltage 100 V ID Continuous (TA = 25˚C, θJA = 90) 6 A Pulsed (25˚C, Tpulse = 300 µs) 25 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 75 µA 100 IDSS Drain Source Leakage VDS = 80 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1.2 mA 0.7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 6 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate-to-drain Charge QGS Gate-to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 50 V, VGS = 0 V VDS = 50 V, ID = 6 A Source-Drain Characteristics (TJ= 25˚C...
