EPC1001 Description
DATASHEET EPC1001 Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A EPC1001 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device...