EPC EPC1009
Enhancement Mode Power Transistor
| Part No. | EPC1009 |
|---|---|
| Datasheet | EPC1009 Download |
| Manufacturer |  EPC |
| Description | Enhancement Mode Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
VDS Drain-to-Source Voltage 60 ID Continuous (TA = 25˚C, θJA = 20) Pulsed (25˚C, Tpulse = 300 µs) 6 25 VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 -40 to 150 V A V ˚C PARAMETER Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(TH) Gate Threshold Voltage RDS(ON) Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 75 µA VDS = 48 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 1.2 mA VGS = 5 V, ID = 6 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to Drain Charge QGS Gate to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 30 V, VGS = 0 V VDS = 30 V, ID = 6 A Source-Drain Characteristics (TJ= 25˚C unless other...
