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EPC

EPC2010C Datasheet Preview

EPC2010C Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2010C
EPC2010C – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 25 mΩ
ID , 22 A
D
G
S
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
ID
Continuous (TA = 25°C, RθJA = 5.3)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE
UNIT
200
V
22
A
90
6
V
-4
-40 to 150
°C
-40 to 150
EPC2010C eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Lidar
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
1.1
RθJB Thermal Resistance, Junction-to-Board
2.7
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
56
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
MIN TYP MAX
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 200 μA
VGS = 0 V, VDS = 160 V
200
50
150
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = -4 V
1
3
50
150
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 3 mA
0.8
1.4
2.5
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 12 A
18
25
VSD
Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
IS = 0.5 A, VGS = 0 V
1.7
UNIT
V
µA
mA
µA
V
mΩ
V
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
|1




EPC

EPC2010C Datasheet Preview

EPC2010C Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2010C
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
CISS
Input Capacitance
380
540
COSS
Output Capacitance
VDS = 100 V, VGS = 0 V
240
320
CRSS
Reverse Transfer Capacitance
1.8
2.7
RG
Gate Resistance
0.4
QG
Total Gate Charge
VDS = 100 V, ID = 12 A, VGS = 5 V
3.7
5.3
QGS
Gate-to-Source Charge
1.3
QGD
Gate-to-Drain Charge
VDS = 100 V, ID = 12 A
0.7
1.3
QG(TH)
Gate Charge at Threshold
0.9
QOSS
Output Charge
VDS = 100 V, VGS = 0 V
40
52
QRR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25ºC
90
80
VGS = 5 V
VGS = 4 V
70
VGS = 3 V
VGS = 2 V
60
50
40
30
20
10
0
0
1
2
3
4
5
6
VDS – Drain-to-Source Voltage (V)
Figure 2: Transfer Characteristics
90
80
25˚C
125˚C
70
VDS = 6 V
60
50
40
30
20
10
0
0.5 1 1.5 2 2.5 3 3.5 4
VGS – Gate-to-Source Voltage (V)
4.5 5
Figure 3: RDS(on) vs. VGS for Various Drain Current
60
50
40
30
20
ID = 10 A
ID = 20 A
10
ID = 40 A
ID = 60 A
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
Figure 4: RDS(on) vs. VGS for Various Temperatures
60
25˚C
50
125˚C
ID = 12 A
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate-to-Source Voltage (V)
|2



Part Number EPC2010C
Description Power Transistor
Maker EPC
Total Page 3 Pages
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