EPC2016C Datasheet | EPC

e Ga N® FET DATASHEET - Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A EFFICIENT POWER CONVERSION Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) Continuous (TA = 25°C, RθJA = 13.4°C/W) Pulsed (25°C, TPULSE = 300 µs) 18 A Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -4 TJ Operating Temperature TSTG Storage Temperature - 40 to 150 °C - 40 to 150 Thermal Characteristics PARAMETER UNIT RθJC Thermal Resistance, Junction-to-Case RθJB Thermal Resistance, Junction-to-Board °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co./epc/documents/product-training/Appnote_Thermal_Performance_of_e Ga N_FETs.pdf for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST...