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EPC

EPC2016C Datasheet Preview

EPC2016C Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2016C – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 16 mΩ
ID , 18 A
D
G
S
EPC2016C
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
UNIT
Drain-to-Source Voltage (Continuous)
100
V
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
120
V
Continuous (TA = 25°C, RθJA = 13.4°C/W)
ID
Pulsed (25°C, TPULSE = 300 µs)
18
A
75
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage
6
V
-4
TJ Operating Temperature
TSTG Storage Temperature
–40 to 150
°C
–40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
2
RθJB Thermal Resistance, Junction-to-Board
4
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
69
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 300 μA
VGS = 0 V, VDS = 80 V
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = -4 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 3 mA
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 11 A
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V
All measurements were done with substrate connected to source.
EPC2016C eGaN® FETs are supplied only in
passivated die form with solder bars.
Die size: 2.1 x 1.6 mm
Applications
• High Speed DC-DC conversion
• Class-D Audio
• High Frequency Hard-Switching and
Soft-Switching Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
MIN TYP MAX
UNIT
100
V
25
150
µA
0.5
3
mA
0.15
0.25
mA
0.8
1.4
2.5
V
12
16
1.8
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1




EPC

EPC2016C Datasheet Preview

EPC2016C Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2016C
PARAMETER
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
MIN TYP MAX
CISS
Input Capacitance
360
420
COSS
Output Capacitance
VGS = 0 V, VDS = 50 V
210
310
CRSS
Reverse Transfer Capacitance
3.2
4.8
RG
Gate Resistance
0.4
QG
Total Gate Charge
3.4
4.5
QGS
Gate-to-Source Charge
QGD
Gate-to-Drain Charge
VDS = 50 V, ID = 11 A
1.1
0.55
1
QG(TH)
Gate Charge at Threshold
0.7
QOSS
Output Charge
VGS = 0 V, VDS = 50 V
16
24
QRR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C
75
60
45
Figure 2: Transfer Characteristics
75
25˚C
60
125˚C
VDS = 3 V
45
UNIT
pF
Ω
nC
30
VGS = 5 V
30
VGS = 4 V
VGS = 3 V
15
VGS = 2 V
15
00
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
50
ID = 8 A
ID = 12 A
40
ID = 20 A
ID = 40 A
30
Figure 4: RDS(on) vs. VGS for Various Temperatures
50
25˚C
125˚C
40
ID = 11 A
30
20
20
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|2



Part Number EPC2016C
Description Power Transistor
Maker EPC
Total Page 3 Pages
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