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EPC2019 Datasheet Preview

EPC2019 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2019 – Enhancement Mode Power Transistor
VDS, 200 V
RDS(on) , 50 mW
ID , 8.5 A
D
G
S
EPC2019
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
ID
Continuous (TA = 25˚C, RθJA = 18°C/W)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE
UNIT
200
V
8.5
A
42
6
V
-4
-40 to 150
°C
-40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
2.7
RθJB Thermal Resistance, Junction-to-Board
7.5
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
72
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2019 eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class-D Audio
• High Frequency Hard-Switching and
Soft-Switching Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
MIN TYP MAX
UNIT
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 125 μA
VGS = 160 V, VDS = 0 V
200
V
20
100
µA
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = -4 V
0.8
2.5
mA
20
100
µA
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 1.5 mA
0.8
1.4
2.5
V
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 7 A
36
50
mΩ
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V
1.8
V
All measurements were done with substrate connected to source.
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1




EPC

EPC2019 Datasheet Preview

EPC2019 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2019
PARAMETER
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
MIN TYP MAX
UNIT
CISS
Input Capacitance
200
270
COSS
Output Capacitance
VGS = 100 V, VDS = 0 V
110
150
pF
CRSS
Reverse Transfer Capacitance
0.7
1
RG
Gate Resistance
0.4
Ω
QG
Total Gate Charge
VDS = 100 V, VGS = 5 V, ID = 7 A
1.8
2.5
QGS
Gate-to-Source Charge
0.6
QGD
QG(TH)
Gate-to-Drain Charge
Gate Charge at Threshold
VDS = 100 V, ID = 7 A
0.35
0.6
nC
0.4
QOSS
Output Charge
VDS = 100 V, VDS = 0 V
18
23
QRR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
Figure 1: Typical Output Characteristics at 25°C
40
35
30
25
20
15
VGS = 5 V
VGS = 4 V
10
VGS = 3 V
VGS = 2 V
5
0
0
1
2
3
4
5
6
VDS – Drain-to-Source Voltage (V)
Figure 2: Transfer Characteristics
40
35
25˚C
125˚C
30
VDS = 6 V
25
20
15
10
5
0
0.5 1.0
1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
4.5 5.0
Figure 3: RDS(on) vs. VGS for Various Drain Currents
120
100
ID = 4 A
ID = 8 A
ID = 12 A
80
ID = 24 A
60
40
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
120
25˚C
100
125˚C
ID = 7 A
80
60
40
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|2



Part Number EPC2019
Description Power Transistor
Maker EPC
Total Page 3 Pages
PDF Download

EPC2019 Datasheet PDF





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