| Description | eGaN® FET DATASHEET EPC2034 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 10 mΩ ID , 48 A D G S EPC2034 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that... |
| Features |
Thermal Resistance, Junction-to-Ambient (Note 1)
45
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
PARAMETER
Static Characteristics (TJ= 25°C unless otherwis...
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| Datasheet |
 EPC2034 Datasheet - 1.52MB |
