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EPC2034C Datasheet Preview

EPC2034C Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2034C – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 8 mΩ
ID , 48 A
D
G
S
EPC2034C
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
ID
Continuous (TA = 25°C)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE UNIT
200
V
48
A
213
6
V
-4
–40 to 150
°C
–40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC
Thermal Resistance, Junction-to-Case
0.3
RθJB
Thermal Resistance, Junction-to-Board
4
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
45
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
EPC2034C eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 4.6 mm x 2.6 mm
• High Frequency DC/DC Conversion
• Multi-level AC/DC Power Supplies
• Wireless Power
• Solar Micro Inverters
• Robotics
• Class-D Audio
• Low Inductance Motor Drives
PARAMETER
Static Characteristics (TJ= 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 0.6 mA
IDSS
Drain-Source Leakage
VDS = 160 V, VGS = 0 V, TJ = 25°C
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Forward Leakage#
VGS = 5 V, TJ = 25°C
VGS = 5 V, TJ = 125°C
Gate-to-Source Reverse Leakage
VGS = -4 V, TJ = 25°C
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 7 mA
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 20 A
VSD
Source-Drain Forward Voltage
# Defined by design. Not subject to production test.
IS = 0.5 A, VGS = 0 V
MIN TYP MAX UNIT
200
V
0.03 0.4
mA
0.002 4
mA
0.03
9
mA
0.03 0.4
mA
0.8 1.1
2.5
V
6
8
1.7
V
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
|1




EPC

EPC2034C Datasheet Preview

EPC2034C Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2034C
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
PARAMETER
TEST CONDITIONS
CISS
Input Capacitance#
CRSS
Reverse Transfer Capacitance
COSS
Output Capacitance#
VDS = 100 V, VGS = 0 V
COSS(ER)
COSS(TR)
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
VDS = 0 to 100 V, VGS = 0 V
RG
Gate Resistance
QG
Total Gate Charge#
VDS = 100 V, VGS = 5 V, ID = 20 A
QGS
Gate to Source Charge
QGD
Gate to Drain Charge
VDS = 100 V, ID = 20 A
QG(TH)
QOSS
Gate Charge at Threshold
Output Charge#
VDS = 100 V, VGS = 0 V
QRR
Source-Drain Recovery Charge
# Defined by design. Not subject to production test.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
MIN TYP
1155
3.1
641
755
969
0.5
11.1
3.8
2.0
2.1
96
0
MAX
1386
962
13.8
144
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25°C
200
VGS = 5 V
VGS = 4 V
150
VGS = 3 V
VGS = 2 V
100
Figure 2: Transfer Characteristics
200
25˚°C
150
125˚°C
VDDSS==36VV
100
50
50
0
0
1
2
3
4
5
6
VDS – Drain-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
20
ID = 10 A
15
ID = 20 A
ID = 30 A
ID = 40 A
10
5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
20
25˚°C
125˚°C
15
VIDD=S =203 AV
10
5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
|2


Part Number EPC2034C
Description Power Transistor
Maker EPC
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EPC2034C Datasheet PDF






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