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EPC

EPC8009 Datasheet Preview

EPC8009 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC8009 – Enhancement Mode Power Transistor
VDS , 65 V
RDS(on) , 130 mΩ
ID , 4 A
D
G
S
EPC8009
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE UNIT
Drain-to-Source Voltage (Continuous)
65
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C)
78
V
ID
Continuous (TA = 25°C, RθJA = 33°C/W)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
4
A
7.5
6
V
–4
TJ Operating Temperature
TSTG Storage Temperature
–40 to 150
°C
–40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
8.2
RθJB Thermal Resistance, Junction-to-Board
16
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
82
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
EPC8009 eGaN FETs are supplied only in
passivated die form with solder bars
Die Size: 2.1 mm x 0.85 mm
Applications
• Ultra High Speed DC-DC Conversion
• RF Envelope Tracking
• Wireless Power Transfer
• Game Console and Industrial Movement
Sensing (Lidar)
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
PARAMETER
Static Characteristics (TJ= 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 125 µA
VDS = 52 V, VGS = 0 V
IGSS
VGS(TH)
RDS(on)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
Drain-Source On Resistance
VGS = 5 V
VGS = -4 V
VDS = VGS, ID = 0.25 mA
VGS = 5 V, ID = 0.5 A
VSD
Source-Drain Forward Voltage
Specifications are with substrate connected to source where applicable.
IS = 0.5 A, VGS = 0 V
MIN TYP MAX UNIT
65
V
50
100
µA
100 500
µA
50
100
0.8 1.4
2.5
V
90
130
2.2
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1




EPC

EPC8009 Datasheet Preview

EPC8009 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC8009
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
PARAMETER
TEST CONDITIONS
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
RG
Gate Resistance
QG
Total Gate Charge
QGS
Gate-to-Source Charge
QGD
Gate-to-Drain Charge
QG(TH)
Gate Charge at Threshold
QOSS
Output Charge
QRR
Source-Drain Recovery Charge
Specifications are with substrate connected to source where applicable.
VGS = 0 V, VDS = 32.5 V
VDS = 32.5 V, VGS = 5 V, ID = 1 A
VGS = 0 V, VDS = 32.5 V
MIN TYP
45
19
0.5
0.3
370
120
55
96
940
0
MAX UNIT
52
28 pF
0.8
Ω
450
94
pC
1400
Figure 1: Typical Output Characteristics at 25°C
8
VGS = 5
7
VGS = 4
VGS = 3
6
VGS = 2
5
4
3
2
1
00
0.5
1
1.5
2
2.5
3
VDS– Drain-to-Source Voltage (V)
Figure 2: Transfer Characteristics
8
25˚C
7
125˚C
6 VDS = 3 V
5
4
3
2
1
0
0.5 1
1.5 2 2.5 3 3.5 4
VGS– Gate-to-Source Voltage (V)
4.5 5
Figure 3: R DS(on) vs. VGS for Various Drain Currents
400
350
300
250
ID= 0.5 A
ID= 1.0 A
ID= 1.5 A
ID= 2.0 A
200
150
100
50
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS– Gate-to-Source Voltage (V)
Figure 4: R DS(on) vs. VGS for Various Temperatures
400
25˚C
350
125˚C
300
ID = 1 A
250
200
150
100
50
2
2.5
3
3.5
4
4.5
5
VGS– Gate-to-Source Voltage (V)
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|2



Part Number EPC8009
Description Power Transistor
Maker EPC
Total Page 3 Pages
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EPC8009 Datasheet PDF





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