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EPC8010 Datasheet Preview

EPC8010 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC8010 – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 160 mΩ
ID , 4 A
D
G
S
EPC8010
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
ID
Continuous (TA = 25°C, RθJA = 27°C/W)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE UNIT
100
V
4
A
7.5
6
V
–4
–40 to 150
°C
–40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
8.2
RθJB Thermal Resistance, Junction-to-Board
16
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
82
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
PARAMETER
Static Characteristics (TJ= 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
IGSS
Drain-to-Source Voltage
Drain-Source Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS(TH)
Gate Threshold Voltage
RDS(on)
Drain-Source On Resistance
VSD
Source-Drain Forward Voltage
Specifications are with substrate connected to source where applicable.
VGS = 0 V, ID = 125 µA
VDS = 80 V, VGS = 0 V
VGS = 5 V
VGS = -4 V
VDS = VGS, ID = 0.25 mA
VGS = 5 V, ID = 0.5 A
IS = 0.5 A, VGS = 0 V
EPC8010 eGaN FETs are supplied only in
passivated die form with solder bars
Die Size: 2.1 mm x 0.85 mm
Applications
• Ultra High Speed DC-DC Conversion
• RF Envelope Tracking
• Wireless Power Transfer
• Game Console and Industrial Movement
Sensing (LiDAR)
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
MIN TYP MAX UNIT
100
V
20
100
µA
0.1
0.5
mA
20
100
μA
80 1.4
2.5
V
120 160
2.5
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1




EPC

EPC8010 Datasheet Preview

EPC8010 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC8010
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
PARAMETER
TEST CONDITIONS
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
RG
Gate Resistance
QG
Total Gate Charge
QGS
Gate-to-Source Charge
QGD
Gate-to-Drain Charge
QG(TH)
Gate Charge at Threshold
QOSS
Output Charge
QRR
Source-Drain Recovery Charge
Specifications are with substrate connected to source where applicable.
VDS = 50 V, VGS = 0 V
VDS = 50 V, VGS = 5 V, ID = 1 A
VDS = 50 V, ID = 1 A
VDS = 50 V, VGS = 0 V
MIN TYP MAX UNIT
43
55
pF
25
36
0.3 0.5
0.3
Ω
360 480
130
60 100
pC
100
2200 3300
0
Figure 1: Typical Output Characteristics at 25°C
7
6
VGS = 5 V
VGS = 4 V
5
VGS = 3 V
VGS = 2 V
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
Figure 2: Transfer Characteristics
7
25˚C
6
125˚C
VDS = 3 V
5
4
3
2
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
500
ID = 0.5 A
400
ID = 1 A
ID = 1.5 A
ID = 2 A
300
200
100
0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
500
25˚C
400
125˚C
ID = 1 A
300
200
100
0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|2



Part Number EPC8010
Description Power Transistor
Maker EPC
Total Page 3 Pages
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