F50D2G41LB-66YG2M memory equivalent, 1.8v 2 gbit (2 x 1 gbit) spi-nand flash memory.
* Voltage Supply: 1.8V (1.7V~1.95V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - .
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