* Voltage Supply: 1.8V (1.7V~1.95V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
* Page Read Operation - Page Size: (2K + 64) Byte - Read from Cel
F50D2G41LB-66YG2M Datasheet (1.25 MB)
F50D2G41LB-66YG2M
ESMT
1.25 MB
1.8v 2 gbit (2 x 1 gbit) spi-nand flash memory.
ESMT Flash (Preliminary) F50D2G41LB (2M) 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Co.
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