Datasheet4U Logo Datasheet4U.com

F59D1G81MB-45BG2M - 1.8V NAND Flash Memory

This page provides the datasheet information for the F59D1G81MB-45BG2M, a member of the F59D1G81MB-45TG2M 1.8V NAND Flash Memory family.

Description

The Device is a 128Mx8bit with spare 4Mx8bit capacity.

The device is offered in 1.8V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max. ) - Serial Access: 45ns (.

📥 Download Datasheet

Datasheet preview – F59D1G81MB-45BG2M

Datasheet Details

Part number F59D1G81MB-45BG2M
Manufacturer ESMT
File Size 2.37 MB
Description 1.8V NAND Flash Memory
Datasheet download datasheet F59D1G81MB-45BG2M Datasheet
Additional preview pages of the F59D1G81MB-45BG2M datasheet.

📁 Similar Datasheet

  • F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
Other Datasheets by ESMT

Full PDF Text Transcription

Click to expand full text
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) x16 -Page Size: (1K + 32) Word (x16)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time x8 - Program time: 300us (Typ.) - Block Erase time: 4ms (Typ.
Published: |