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F59L1G81LB-25TG2M Datasheet - ESMT

1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81LB-25TG2M Features

* Voltage Supply: 3.3V (2.7V~3.6V)

* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

* Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25

F59L1G81LB-25TG2M General Description

The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59L1G81LB-25TG2M Datasheet (2.25 MB)

Preview of F59L1G81LB-25TG2M PDF

Datasheet Details

Part number:

F59L1G81LB-25TG2M

Manufacturer:

ESMT

File Size:

2.25 MB

Description:

1 gbit (128m x 8) 3.3v nand flash memory.

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TAGS

F59L1G81LB-25TG2M Gbit 128M 3.3V NAND Flash Memory ESMT

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