F59L1G81MA-25BCG2Y Description
ESMT.
F59L1G81MA-25BCG2Y Key Features
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time
- Program time: 300us
- typical
- Block Erase time: 3ms