F59L1G81MA-25BG2Y
F59L1G81MA-25BG2Y is 1 Gbit (128M x 8) 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the F59L1G81MA-25TG2Y comparator family.
- Part of the F59L1G81MA-25TG2Y comparator family.
ESMT
Flash
Features
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time
- Program time: 300us
- typical
- Block Erase time: 3ms
- typical mand/Address/Data Multiplexed I/O Port Hardware Data Protection
- Program/Erase Lockout During Power Transitions
F59L1G81MA (2Y)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
Reliable CMOS Floating Gate Technology
- ECC Requirement:
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