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F59L1G81MA-25TG2Y Datasheet 1 Gbit (128m X 8) 3.3v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash.

Key Features

  • Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Prot.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L1G81MA-25TIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25BCG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25BG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25BUG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25TG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81MA-25TG2Y Distributor