F59L1G81MA-25BCIG2Y
F59L1G81MA-25BCIG2Y is 1 Gbit (128M x 8) 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the F59L1G81MA comparator family.
- Part of the F59L1G81MA comparator family.
ESMT
Flash
Features z Voltage Supply: 3.3V (2.7V~3.6V) z Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit z Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte z Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time
- Program time: 350us
- typical
- Block Erase time: 3.5ms
- typical z mand/Address/Data Multiplexed I/O Port z Hardware Data Protection
- Program/Erase Lockout During Power Transitions
F59L1G81MA (2Y)
Operation Temperature Condition -40°C~85°C
1 Gbit (128M x 8) 3.3V NAND Flash Memory z...
