M12L128168A-6TG2N Key Features
- CAS Latency ( 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave ) y All inputs are sampled at the positive going edge of the system clock y Burst R
- Part: M12L128168A-6TG2N
- Description: 2M x 16 Bit x 4 Banks Synchronous DRAM
- Manufacturer: Elite Semiconductor Microelectronics Technology
- Size: 677.37 KB
Related Elite Semiconductor Microelectronics Technology Datasheets
| Part Number | Description |
|---|---|
| M12L128168A-6TG2S | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-6TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-6TIG2S | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-6TVAG2N | Synchronous DRAM |
| M12L128168A-6TVAG2S | 2M x 16 Bit x 4 Banks Synchronous DRAM |