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M12L128168A-6TG2S Datasheet 2M x 16 Bit x 4 Banks Synchronous DRAM

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Download the M12L128168A-6TG2S datasheet PDF. This datasheet also includes the M12L128168A variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M12L128168A_EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.

Synchronous design allow

Overview

ESMT SDRAM.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the positive going edge of the system clock Burst Read single write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) M12L128168A (2S) 2M x 16 Bit x 4 Banks Synchronous DRAM.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L128168A-6TG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6TVAG2N Synchronous DRAM
M12L128168A-6TVAG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6TVG2N Synchronous DRAM
M12L128168A-6TVG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-6BVAG2N Synchronous DRAM