M12L16161A-7TIG2Q Key Features
- CAS Latency (2 & 3 )
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave) z All inputs are sampled at the positive going edge of the system clock
- Part: M12L16161A-7TIG2Q
- Description: 512K x 16Bit x 2Banks Synchronous DRAM
- Manufacturer: Elite Semiconductor Microelectronics Technology
- Size: 702.53 KB
Related Elite Semiconductor Microelectronics Technology Datasheets
| Part Number | Description |
|---|---|
| M12L16161A-7TG2R | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-5TG2R | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-5TIG2Q | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L128168A-5BG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128168A-5BG2N | 2M x 16 Bit x 4 Banks Synchronous DRAM |