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M12L16161A-5TG2R

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M12L16161A-5TG2R datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M12L16161A-5TG2R datasheet preview

M12L16161A-5TG2R Datasheet Details

Part number M12L16161A-5TG2R
Datasheet M12L16161A-5TG2R M12L16161A-2R Datasheet (PDF)
File Size 943.14 KB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-5TG2R page 2 M12L16161A-5TG2R page 3

M12L16161A-5TG2R Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Burst Read Single-bit Write operation DQM for masking ORDERING INFORMATION Auto & self...

M12L16161A-5TG2R Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Dual banks operation
  • MRS cycle with address key programs
  • CAS Latency (2 & 3 )
  • Burst Length (1, 2, 4, 8 & full page)
  • Burst Type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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